Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED

High-electron-mobility transistor (HEMT) devices made of gallium nitride can produce significant power and high frequency with performance levels that surpass those of conventional silicon and other cutting-edge semiconducting FET technologies. In this paper, we simulate and analyze the outcomes of two high-electron mobility transistor (HEMT) designs. One arrangement, named as conventional structure, consists of an AlGaN layer stacked above a GaN layer forming a heterojunction. At this junction, a two-dimensional electron gas (2DEG) layer is created, which serves as the structure's distinguishing feature. To enhance the device performance, the alternative structure, named as proposed structure, adds an AlN spacer in the middle of the existing AlGaN and GaN films. In this study, a very high maximum saturation drain current is reported with appropriate optimization parameters. The study compares the energy band diagram, electric field arrangement, and drain output curves of both structures. Furthermore, this research suggests that combining AlGaN/AlN/GaN HEMTs with LEDs can enhance the functionality of LEDs from an application standpoint. The simulations are performed by utilizing APSYS CROSSLIGHT software and it is shown that the proposed structure has outstanding outcomes.