二硫化钼
陶瓷
钼
材料科学
基质(水族馆)
二硫键
纳米技术
冶金
化学工程
化学
工程类
地质学
生物化学
海洋学
作者
Yixiong Zheng,Cong Yuan,Sichen Wei,Hyun Kim,Fei Yao,Jung‐Hun Seo
出处
期刊:Nanomaterials
[MDPI AG]
日期:2019-10-14
卷期号:9 (10): 1456-1456
被引量:7
摘要
In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2. Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.
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