降级(电信)
掺杂剂
有机发光二极管
图层(电子)
材料科学
分析化学(期刊)
化学
兴奋剂
光电子学
纳米技术
色谱法
电气工程
工程类
作者
Daichi Shirakura,Shinji Okamura,Yoshihiko Taguchi,Hikaru Takano,Takahiro Shibamori,Takashi Miyamoto,Junichiro Sameshima
摘要
Degradation analysis was conducted to p‐i‐n type OLED devices. PL, LDI‐MS, and GCIB‐TOF‐SIMS revealed the degraded layer was EML and molecular formula of the degradation product. GCIB‐TOF‐SIMS clarified the change of n‐dopant with the degradation.
科研通智能强力驱动
Strongly Powered by AbleSci AI