Hydrogenation Mechanisms of Poly‐Si/SiOx Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms Hydrogen can deactivate defects and impurities inside doped polycrystalline silicon fi lms and interfacial oxide layers to improve the passivation qualities of passivating contacts on silicon wafers. In article number 1900476, Thien N. Truong, Hieu T. Nguyen, and co-workers elucidate the hydrogenation mechanisms of different post-treatment techniques inside the fi lms and at the oxide interfaces.