钝化
材料科学
富勒烯
X射线光电子能谱
化学工程
钙钛矿(结构)
纳米技术
图层(电子)
有机化学
化学
工程类
作者
J. Wang,Kunal Datta,Christ H. L. Weijtens,Martijn M. Wienk,René A. J. Janssen
标识
DOI:10.1002/adfm.201905883
摘要
Abstract Interfaces between the photoactive and charge transport layers are crucial for the performance of perovskite solar cells. Surface passivation of SnO 2 as electron transport layer (ETL) by fullerene derivatives is known to improve the performance of n–i–p devices, yet organic passivation layers are susceptible to removal during perovskite deposition. Understanding the nature of the passivation is important for further optimization of SnO 2 ETLs. X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO 2 interface. Through a comparative study using [6,6]‐phenyl‐C 61 ‐butyric acid methyl ester (PCBM) and [6,6]‐phenyl‐C 61 ‐butyric acid (PCBA) passivation layers, a direct correlation is established between the formation of interfacial chemical bonds and the retention of passivating fullerene molecules at the SnO 2 interface that effectively reduces the number of defects and enhances electron mobility. Devices with only a PCBA‐monolayer‐passivated SnO 2 ETL exhibit significantly improved performance and reproducibility, achieving an efficiency of 18.8%. Investigating thick and solvent‐resistant C 60 and PCBM‐dimer layers demonstrates that the charge transport in the ETL is only improved by chemisorption of the fullerene at the SnO 2 surface.
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