Temperature-dependent current-voltage characteristics of β -Ga2O3 trench Schottky barrier diodes

Temperature-dependent behavior of regular and trench Ni/β-Ga2O3 (001) Schottky barrier diodes (SBDs) was studied. Current–Voltage (I–V) characteristics, ideality factor, and barrier height of trench SBDs were compared with those of regular SBDs at temperatures ranging from 100 K to 650 K. The trench SBDs showed a superior performance to regular SBDs. At elevated temperatures (as high as 650 K), the trench SBDs maintained a high ON/OFF current ratio (105), which is four orders of magnitude higher than that in the regular diodes. The current–voltage characteristics of the trench SBDs were recovered when the sample was cooled to room temperature after high temperature measurements, whereas the I–V characteristics of the regular SBDs were degraded. The breakdown voltage (BV) was also measured on as-fabricated devices and after high temperature ramp up to 650 K. We observed a reduction in maximum achieved BV from 1084 V to 742 V on the trench SBDs and from 662 V to 488 V on regular SBDs, respectively, after temperature-dependent measurements.