材料科学
绝缘体上的硅
多晶硅
退火(玻璃)
光电子学
原位
微晶
硅
图层(电子)
工程物理
纳米技术
复合材料
冶金
薄膜晶体管
工程类
物理
气象学
作者
Rongwang Dai,Yun Liu,Jingjun Ding,Chenyu Shi,Ziwen Wang,Zhongying Xue,Xing Wei
标识
DOI:10.1016/j.mssp.2024.108330
摘要
In this paper, the structures and radio-frequency (RF) properties of high resistivity silicon (HR-Si) wafers with a polycrystalline silicon (Poly-Si) charge capture layer after in-situ annealing were investigated. The thermal treatment significantly improves the wafer warpage and optimize the resistivity of Poly-Si/HR-Si interfaces. By using spreading resistance profiling (SRP), energy dispersive spectrometer (EDS) and secondary ion mass spectrometry (SIMS) technology, the rise of interfacial resistivity may be as results of the pyrolysis of the native oxide and the diffusion of hydrogen atoms. The transmission Kikuchi diffraction (TKD) analysis exhibited that the grains were recrystallized during the annealing, leading to the transformation from the small angle boundaries (SAGBs) into low-Σ coincidence lattice grain boundaries (CSL GBs). The drop of the bulk resistivity of the Poly-Si layer is attributed to the reduction of the total grain boundary (GB) density and the increase of the low electro-activity GB density. Moreover, the microwave losses and non-linearity of the RF-SOI with embedded Poly-Si layer was evaluated by on-chip testing based on CPW. It was determined that the decrease in the Poly-Si resistivity only worsens the microwave losses but not the non-linearity.
科研通智能强力驱动
Strongly Powered by AbleSci AI