材料科学
电容
晶体管
电解质
电流(流体)
光电子学
电压
聚合物
纳米技术
电气工程
电极
复合材料
化学
物理化学
工程类
作者
Kyung Gook Cho,Keun Hyung Lee,C. Daniel Frisbie
标识
DOI:10.1021/acsami.4c00079
摘要
We demonstrate that the transfer characteristics of electrolyte-gated transistors (EGTs) with polythiophene semiconductor channels are a strong function of gate/electrolyte interfacial contact area, i.e., gate size. Polythiophene EGTs with gate/electrolyte areas much larger than the channel/electrolyte areas show a clear peak in the drain current vs gate voltage (
科研通智能强力驱动
Strongly Powered by AbleSci AI