薄膜晶体管
沟槽
材料科学
计算机科学
纳米技术
图层(电子)
作者
Do Hyung Kim,Junsung Kim,Young Jun Im,Sang‐Hee Ko Park
摘要
We introduce new structure of oxide TFT, providing high current in a small footprint and suitable V on . The trench TFT consisted of lateral region of high current path and thin two vertical channels. This can suppress not only channel shortening, also negative V on shift of high current driving oxide TFT.
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