Epitaxy of a Monocrystalline CsPbBr3–SrTiO3 Halide–Oxide Perovskite p–n Heterojunction with High Stability for Photodetection

Abstract Perovskite heterojunctions are essential components of perovskite optoelectronics, but their construction and investigation have been impeded by the instability and severe anion interdiffusion. This work epitaxially deposits p‐type CsPbBr 3 on n‐type Nb:SrTiO 3 (STO) to construct a functional perovskite heterojunction with high stability. The lattice match allows epitaxial growth of CsPbBr 3 to occur over large scale, resulting in a monocrystalline thin film with excellent crystallinity and uniformity. The highly stable STO prevents the anion migration frequently happening in halide perovskites, forming a sharp interface of two perovskite with opposite conduction type, with which a diode is fabricated and a current rectification ratio of 374 is obtained. The diode is able to work as a photodetector with dark current of 2.01 × 10 −12 A at −1 V and responsivity ( R ) of 8.26 A W −1 , rendering a detectivity ( D *) of 2.98 × 10 13 Jones. Owing to the all‐inorganic architecture, effective photoresponse at temperature as high as 150 °C is guaranteed with D * of ≈1.52 × 10 13 Jones. Combining the unique optoelectrical properties of halide perovskite and the rigidity of oxide perovskite, the epitaxy of CsPbBr 3 on n–type STO opens up a new method to construct functional perovskite heterojunction for optoelectronics.