Determinants of vacancy formation and migration in high-entropy alloys

Vacancies are crucial for the radiation resistance, strength, and ductility of high-entropy alloys (HEAs). However, complex electronic interactions resulting from chemical disorder prohibit the quantification of vacancy formation energy ( E f ) and migration barriers ( E b ). Herein, we propose an electronic descriptor χ S v (electronegativity χ and valence-electron number S v ) to quantify the bonding strength of constituents on the basis of the tight-binding model, which allows us to build analytical models to achieve the site-to-site quantification of E f and E b . The descriptor χ S v reflects the d-band occupation, indicating the dominant role of the electronic interactions in the vacancy formation and migration of HEAs. As a size effect, local lattice distortion plays a more important role in vacancy migration than in vacancy formation. Our model establishes a universal physical picture of vacancy formation and migration, which helps to understand the radiation resistance and mechanical properties of HEAs, thereby accelerating the design of high-performance HEAs.