Residuals reduction in imaging-based overlay using color per layer

As the semiconductor industry rapidly approaches the 3nm lithography node, on-product overlay (OPO) requirements have become tighter, which drives metrology performance enhancements to meet the reduction in overlay (OVL) residuals. The utilization of multiple measurement wavelengths in Imaging- Based Overlay (IBO) has increased in the past few years to meet these needs. Specifically, the color per layer (CPL) method allows for optimizing the OVL measurement conditions per layer, including focus, light, wavelength (WL), and polarization customization which enhance the metrology results. CPL is applicable for multiple technology segments (logic, foundry, DRAM, 3D NAND), relevant for different devices (DRAM high stack layers, NAND channel holes, etc.), and can work well for both thin and thick layers for standard and EUV lithography processes. In this paper, we will review the benefits of CPL for multiple DRAM and NAND critical layers. We will describe how CPL can contribute to measurement accuracy by quantifying the OVL residual reduction in comparison to single-wavelength (SWL) measurement conditions.