Design and Implementation of 50GHz-110GHz Ultra-Broadband Noise Source

In this paper, an ultra-wideband millimeter-wave terahertz noise source with an operating frequency of 50GHz to 110GHz is studied and designed. In the design, a noise diode with high-frequency excess noise ratio(ENR) is used, and through the suspended microstrip attenuation matching circuit, the full-band excess noise ratio is greater than 7dB, and the thermal noise power is greater than or equal to 7.6dBm. At the same time, the module structure uses a 1mm coaxial microstrip transition structure for the first time, and the planar circuit structure is more convenient for testing, and at the same time, the problem of difficult assembly and low noise ratio is optimized.