肖特基势垒
光电子学
钻石
光电流
材料科学
响应度
肖特基二极管
电极
光电探测器
光学
紫外线
化学
二极管
物理
物理化学
复合材料
作者
Xiaohui Zhang,Kang Liu,Benjian Liu,Bing Dai,Yumin Zhang,Jiaqi Zhu
摘要
A thickness asymmetric electrode structure on an oxygen-terminated type IIa diamond was designed and prepared (one electrode was semitransparent to ultraviolet light and the other blocked the transmission of ultraviolet light). This structure exhibited an apparent photo-induced rectification property under irradiation by a deuterium lamp. This is attributed to the mechanism by which the light penetrating the electrode reduces the metal–diamond contact barrier. Furthermore, we developed a light-modulated Schottky barrier diamond photodetector based on this mechanism. Solar-blind light can lower the Schottky barrier height in situ in the presence of light, which significantly enhances the photocurrent. However, the Schottky barrier is not reduced by light regulation when there is no light; therefore, the low dark current of the detector is still guaranteed. Compared with the non-photo-regulated Schottky barrier detector, the photo-regulated Schottky barrier detector exhibits a 128% increase in responsivity at 220 nm under a 1.6 V/ μm bias. For such an obvious difference in detection performance, this mechanism has rarely been a focus of studies on diamond detectors. In addition to diamond detectors, light-modulated barrier technology can also be applied to other fields related to the diamond surface potential, such as color center control and Schottky diodes; it can also be used to control or evaluate device performance.
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