Concomitant Mitigation of VO 6 Octahedron Distortion and Band Broadening in V 2 O 3 for High‐Performing Flexible Supercapacitors

材料科学 八面体 超级电容器 氧化还原 电容 掺杂剂 电化学 兴奋剂 失真(音乐) 纳米技术 化学工程 结晶学 光电子学 电极 物理化学 晶体结构 冶金 化学 工程类 CMOS芯片 放大器
作者
Qingli Xu,Haoyin Zhong,Qi Zhang,Ting Xiong,Junchen Yu,Chao Wu,Shibo Xi,Zhi Gen Yu,Mengjuan Zhou,Xiaona Yang,Xiaopeng Wang,Kun Zhang,Wee Siang Vincent Lee,Junmin Xue
出处
期刊:Advanced Functional Materials [Wiley]
卷期号:34 (42) 被引量:8
标识
DOI:10.1002/adfm.202406595
摘要

Abstract Vanadium trioxide (V 2 O 3 ) has emerged as one of the promising candidates for fiber‐shaped supercapacitors. However, irreversible redox behavior during prolonged cycling process has been commonly reported due to the intrinsically distorted VO 6 octahedron in V 2 O 3 , which inevitably compromises its electrochemical capacitance. Herein, a strategy to simultaneously mitigate the distortion in VO 6 octahedron and optimization of electronic structure in V 2 O 3 is proposed by studying a Mo‐doped V 2 O 3 modified stainless steel wire (Mo‐V 2 O 3 @SSW). The introduction of Mo dopants effectively tunes the V–O local environment, resulting in a substantial alleviation of the distortion in VO 6 octahedron. The as‐prepared Mo‐V 2 O 3 with a more regular VO 6 octahedron exhibits highly reversible redox behavior, with negligible structural change after 10 000 cycles. Moreover, it is found that doping Mo into V 2 O 3 leads to V 3d band broadening, which generates more electronic states around Fermi level, thereby significantly accelerating the electron transfer during redox processes. Consequently, Mo‐V 2 O 3 @SSW attains a capacitance of 774.4 mF cm −2 at 0.4 mA cm −2 , with a capacitance retention of 85.49% after 10 000 cycles. And the integration of Mo‐V 2 O 3 @SSW supercapacitors, further showcases its strong applicability in wearable technologies. The comprehensive understanding of the structural–activity/stability relationship in this study offers a novel paradigm for developing flexible high‐performing supercapacitors.
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