激光器
人口倒转
光电子学
量子隧道
量子阱
级联
半导体激光器理论
量子级联激光器
量子点激光器
物理
激发态
分子束外延
二极管
电子
波长
量子
异质结
半导体
光学
材料科学
原子物理学
化学
纳米技术
外延
量子力学
色谱法
图层(电子)
作者
Jérôme Faist,Federico Capasso,Deborah L. Sivco,Carlo Sirtori,Albert L. Hutchinson,Alfred Y. Cho
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:1994-04-22
卷期号:264 (5158): 553-556
被引量:4133
标识
DOI:10.1126/science.264.5158.553
摘要
A semiconductor injection laser that differs in a fundamental way from diode lasers has been demonstrated. It is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering. Electrons streaming down a potential staircase sequentially emit photons at the steps. The steps consist of coupled quantum wells in which population inversion between discrete conduction band excited states is achieved by control of tunneling. A strong narrowing of the emission spectrum, above threshold, provides direct evidence of laser action at a wavelength of 4.2 micrometers with peak powers in excess of 8 milliwatts in pulsed operation. In quantum cascade lasers, the wavelength, entirely determined by quantum confinement, can be tailored from the mid-infrared to the submillimeter wave region in the same heterostructure material.
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