Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an “active,” reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS 2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO 2 ). The MoS 2 PL intensity is enhanced by a factor of up to three when the underlying VO 2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO 2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors.