Transparent p-type conducting indium-doped SnO2 thin films deposited by spray pyrolysis

Abstract Tansparent p-type conducting indium-doped SnO2 thin films were successfully prepared by spray pyrolysis. The films were characterized by X-ray diffraction, Hall effect, and UV–Visible absorption spectra. The results showed that for films with In / Sn ratio less than 0.3, the films were rutile structure of SnO2, while for film with In / Sn ratio of 0.4, peaks from In2O3 were observed. Hall effect measurement showed that the conducting type was dependent on both the process temperature and In / Sn ratio. For the films with In / Sn ratio = 0.1 and 0.2, and process temperatures T ≥ 600 °C, the films were p-type, while for T  0.2, and the films were p-type when In / Sn ≤ 0.2. In addition, UV–Vis absorption spectra showed no shift of the absorption edge when doped by indium for In / Sn ratio