材料科学
铁电性
薄膜
多铁性
压电
介电常数
数码产品
极化(电化学)
背景(考古学)
纳米尺度
电介质
工程物理
纳米技术
光电子学
复合材料
电气工程
物理
化学
工程类
古生物学
物理化学
生物
作者
N. Setter,Dragan Damjanović,Lukas M. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,A. I. Kingon,H. Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,S. K. Streiffer
摘要
An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems’ applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems’ applications, and permittivity and loss in ferroelectric films—important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.
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