Photoelectronic and electronic properties of Ti/Si amorphous superlattices

Amorphous Ti/Si superlattices have been prepared by electron beam evaporation. These superlattices exhibit electronic and photoelectronic properties which can be used in a variety of different types of devices. The photovoltaic output from this structure is greatly enhanced by deposition on Si substrates with electrical contacts made only to the superlattice film. The mechanism for the photovoltaic signals and illustrations of different types of devices are discussed.