本征半导体
激光器
半导体
免费承运人
光电子学
材料科学
吸收(声学)
带隙
自由电子模型
双光子吸收
量子阱
化学
半导体激光器理论
自由载流子吸收
散射
原子物理学
光学
物理
标识
DOI:10.1088/0268-1242/7/3/017
摘要
Free-carrier absorption is theoretically studied for semiconductor lasers where the photon energy is as large as the energy gap. A quantum-mechanical investigation shows that intraband absorption is very weak and interband absorption totally negligible, in contrast to the usual classical estimations. Therefore free-carrier absorption in semiconductor lasers is insignificant. It follows that free-carrier absorption is not the reason for the impossibility of laser action in indirect-bandgap semiconductors. Obviously the scattering and mirror losses are responsible for this effect.
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