材料科学
硅
光电子学
绝缘体上的硅
波导管
极化(电化学)
硅光子学
光学
相(物质)
作者
Basma E. Abu-elmaaty,Mohammed S. Sayed,Hossam M. H. Shalaby,Ramesh K. Pokharel,Anand Srivastava
出处
期刊:International Conference on Transparent Optical Networks
日期:2018-09-26
卷期号:: 1-4
被引量:1
标识
DOI:10.1109/icton.2018.8473997
摘要
A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm. The proposed device has a very simple structure, a low insertion loss of −1.5dB, and a low crosstalk of −12.81 dB at a wavelength of 1550nm for transverse electric (TE) polarization.
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