硫系化合物
计算机科学
相变
材料科学
结晶
相变存储器
非易失性存储器
纳米技术
分布式计算
工程物理
工程类
计算机硬件
冶金
化学工程
作者
Wei Zhang,Riccardo Mazzarello,Matthias Wuttig,E. Ma
标识
DOI:10.1038/s41578-018-0076-x
摘要
The global demand for data storage and processing has increased exponentially in recent decades. To respond to this demand, research efforts have been devoted to the development of non-volatile memory and neuro-inspired computing technologies. Chalcogenide phase-change materials (PCMs) are leading candidates for such applications, and they have become technologically mature with recently released competitive products. In this Review, we focus on the mechanisms of the crystallization dynamics of PCMs by discussing structural and kinetic experiments, as well as ab initio atomistic modelling and materials design. Based on the knowledge at the atomistic level, we depict routes to improve the parameters of phase-change devices for universal memory. Moreover, we discuss the role of crystallization in enabling neuro-inspired computing using PCMs. Finally, we present an outlook for future opportunities of PCMs, including all-photonic memories and processors, flexible displays with nanopixel resolution and nanoscale switches and controllers. Chalcogenide phase-change materials (PCMs) are leading candidates for non-volatile memory and neuro-inspired computing devices. This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.
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