作者
Bernd Doll,Johannes Hepp,Mathis Hoffmann,Renè Schüler,Claudia Buerhop‐Lutz,Ian Marius Peters,Jens Hauch,Andreas Maier,Christoph J. Brabec
摘要
Cost-effective, fast, and nondestructive on-site characterization of photovoltaic plants is required to determine countermeasures against power loss, defects, or safety problems. Methods with small impact on the operation and a high throughput, such as infrared thermography (IR), or methods with high resolution for detailed defect information, such as electroluminescence (EL) imaging, are expedient. To combine high resolution and high throughput, we propose to use photoluminescence (PL) as an outdoor characterization method for full-sized module imaging. With PL imaging as with IR imaging, no electrical contact is necessary, yet image resolution is on par with EL images. Our outdoor PL setup features an excitation source with 18 broadband, white, high power, chip on board LEDs coupled with low-cost short pass filters. This setup is suitable for indium gallium arsenide and silicon detectors. Here, we compare the visibility of common defects, including short-circuited bypass diodes, cracks, potential induced degradation, snail trails, ethylene-vinyl acetate degradation, and interconnection failures, in PL images to that in state-of-the-art imaging techniques IR, EL, and ultraviolet fluorescence. We find that out of these seven defects, five can be detected well, cell cracks under certain conditions, and interconnection failures not at all. We discuss how different techniques are complementary to enable better defect detection.