材料科学
薄膜
兴奋剂
掺杂剂
氧化锡
氟化铵
基质(水族馆)
分析化学(期刊)
带隙
锡
电阻率和电导率
复合材料
矿物学
冶金
纳米技术
无机化学
化学
光电子学
色谱法
工程类
地质学
电气工程
海洋学
作者
Achour,Rahal,Mas Ayu Said,Benramache,Boubaker,Benhaoua
出处
期刊:半导体学报:英文版
日期:2013-01-01
卷期号: (9): 21-25
被引量:5
摘要
This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin(II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2 :F thin films were deposited at a 350 C pending time(5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2:F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9( cm)1for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2:F thin films deposited by ultrasonic spray was reported.
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