修边
蒙特卡罗方法
材料科学
曲率
带隙基准
大气温度范围
共发射极
电子工程
电压
温度系数
光电子学
电气工程
工程类
电压基准
数学
物理
机械工程
统计
热力学
复合材料
几何学
跌落电压
作者
Nanqi Liu,R.L. Geiger,Degang Chen
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2021-08-10
卷期号:68 (9): 3551-3561
被引量:14
标识
DOI:10.1109/tcsi.2021.3096166
摘要
A general approach based on a natural basis function expansion to cancel the temperature-curvature of the base-emitter voltage in the bipolar transistors embedded in bandgap references is presented. The proposed method can be applied to the widely used Banba, Kuijk, and Brokaw structures to build references with sub-ppm/°C temperature coefficients. Current version and voltage version embodiments based on a self-bootstrapping concept are provided. Error sources that can potentially affect the reference performance are analyzed and their effects on the temperature coefficient are minimized after trimming. Monte Carlo simulation results confirm that after calibration, temperature drift performance is within the design/trimming target 0.5 ppm/°C. A partially integrated Kuijk-based prototype reference has been designed and fabricated in a 65nm UMC process. Measurement results demonstrated a 1.5 ppm/°C temperature coefficient over a temperature range of 0 °C to 80 °C with a low-cost two-temperature trimming method. With additional trimming, 0.8 ppm/°C performance was achieved.
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