Reconfigurable Carbon Nanotube Barristor

Abstract As the semiconductor industry enters the post‐Moore era, reconfigurability on the device level, that incorporates multifunction in a device unit to realize more complex systems with more compact logic gates, is a promising methodology to extend the development of integrated circuit industry. Here, a reconfigurable carbon nanotube (CNT) barristor is developed on the basis of a Schottky barrier (SB) CNT transistor. The device shows a significant rectifying characteristic and can be reconfigured to a forward rectifying mode or a backward rectifying mode by applying an appropriate gate voltage. The reconfigurability originates from the ambipolar characteristics of the CNT channel, and the rectification behaviors can be attributed to the drain‐induced self‐gating effect. Additional experiments reveal that it is the interfacial charge redistribution that plays the role of an additional gate on the SB near the drain. A gate‐controllable half‐wave rectifier has been fabricated by using the reconfigurable CNT barristor. The CNT barristor brings new functions to CNT electronic devices and also opens up a new methodology for future reconfigurable device design.