A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

Abstract MoS 2 is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS 2 transistor is still inclusive. In this work, a method to fabricate MoS 2 transistors with short channel length is demonstrated, which is realized by the self‐oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS 2 are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self‐oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self‐oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material‐based transistors.