材料科学
居里温度
铋
电介质
陶瓷
铁电性
八面体
热稳定性
钛酸铋
离子
钽
介电损耗
分析化学(期刊)
晶体结构
兴奋剂
化学工程
复合材料
铁磁性
冶金
光电子学
结晶学
凝聚态物理
化学
有机化学
工程类
物理
色谱法
作者
Ronghua Zeng,Xiangping Jiang,Chao Chen,Xiaokun Huang,Xin Nie,Fen Ye,Junsheng Zhuang,Junming Liu
标识
DOI:10.1007/s10854-021-06849-8
摘要
Bi7Ti4.5-xTaxW0.5O21 (BTW-BIT-xTa, x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.30) intergrowth bismuth-layered ceramics were fabricated by traditional solid-phase method. The effects of Ta5+ ion doping on the structure and morphology of BTW-BIT ceramics were investigated by measuring XRD and SEM Photos. It indicated that octahedral distortion was increased with the introduction of Ta5+ ion, giving rise to enhancing Curie temperature and ranging from 689 °C to 721 °C. By means of analysis of the dielectric, impedance and ferroelectric, it was concluded that oxygen vacancies of samples were reduced due to donor ion Ta5+ substituted for ion Ti4+ at B-site. The decreased oxygen vacancies lessened the dielectric loss, improved the insulating properties of the samples, and made the electrical performances better. BTW-BIT-0.10Ta had the optimal electrical performances with a high d33 of 15.3 pC/N (more than twice that of BTW-BIT ceramic), a high Curie temperature Tc of 705 °C and a good thermal stability, indicating a potential application in the high-temperature field.
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