STEM-EELS investigation of c-Si/a-AlO interface for solar cell applications

In this article, STEM-EELS methodology is described to investigate the composition of sensitive crystalline Silicon/amorphous aluminum oxide (c-Si/a-AlOx) interface of an a AlOx/amorphous hydrogenated silicon nitride (a-AlOx/a-SiNx:H) passivation stack of a c-Si solar cell. In this stack, a-AlOx has the distinctive characteristic to provide both chemical and field effect passivation, which need further research to be more controlled in order to improve solar cell efficiency. a-AlOx is known to be unstable under the electron-beam, so we first present a detailed study on the electron-beam radiation damage to c-Si/a-AlOx interface. This interface can indeed undergo several electron-beam irradiation damage like sputtering, knock-on or radiolysis if precautions are not taken. Radiolysis damage has been found to be the dominant radiation damage. Thus, several STEM-EELS acquisition parameters like acceleration voltage, electron dose and scan orientation were taken into account and modified to limit this radiolysis damage. Once the irradiation was limited, STEM-EELS investigation was conduct using DualEELS on the Si and Al L2,3 and OK edge fines structures. The interface was found to be composed of a-SiOx and non-stoichiometric aluminum silicate with a predominance of tetrahedrally coordinated Al in its first layer.