Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

In this work, we propose an effective way to improve the endurance performance of Ga 2 O 3 resistive random access memories by doping ZnO. Excellent bipolar resistive switching behaviors have been observed in atomic-layer-deposited ZnO-doped Ga 2 O 3 RRAMs, which exhibit large memory windows over 10 3 and retention time up to 10 4 . Bipolar resistive switching behaviors can be explained by the formation or rupture of conductive filaments composed of Ag atoms and oxygen vacancies. Current – voltage curves suggest Ohmic conductance of the low resistance states, while the conductive mechanism of the high resistance states corresponds to the trap-assisted space charge limited conduction. Furthermore, the reason why the endurance performance of ZnO-doped Ga 2 O 3 RRAMs is better than pure Ga 2 O 3 RRAMs is analyzed.