材料科学
电阻随机存取存储器
欧姆接触
兴奋剂
电导
热传导
电阻式触摸屏
导电体
光电子学
记忆电阻器
氧气
电压
图层(电子)
复合材料
凝聚态物理
电气工程
有机化学
化学
工程类
物理
作者
Wenjing Li,Jiaxian Wan,Zexin Tu,Hui Li,Hao Wu,Chang Liu
标识
DOI:10.1016/j.ceramint.2021.10.091
摘要
In this work, we propose an effective way to improve the endurance performance of Ga 2 O 3 resistive random access memories by doping ZnO. Excellent bipolar resistive switching behaviors have been observed in atomic-layer-deposited ZnO-doped Ga 2 O 3 RRAMs, which exhibit large memory windows over 10 3 and retention time up to 10 4 . Bipolar resistive switching behaviors can be explained by the formation or rupture of conductive filaments composed of Ag atoms and oxygen vacancies. Current – voltage curves suggest Ohmic conductance of the low resistance states, while the conductive mechanism of the high resistance states corresponds to the trap-assisted space charge limited conduction. Furthermore, the reason why the endurance performance of ZnO-doped Ga 2 O 3 RRAMs is better than pure Ga 2 O 3 RRAMs is analyzed.
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