光电流
电极
介电谱
材料科学
氧化锡
化学工程
可逆氢电极
工作电极
电化学
纳米技术
化学
光电子学
兴奋剂
工程类
物理化学
作者
Shivkanya Shinde,Pavel Majumdar,Sayantan Sil,Markus Löffler,Anamika Banerjee,Bernd Rellinghaus,Sahab Dass,Partha Pratim Ray,Snehangshu Patra
标识
DOI:10.1021/acs.jpcc.0c06059
摘要
The present work focuses on energy-neutral, bias-free, scalable galvanic synthesis of highly crystalline thin films of BiOI on a fluorine-doped tin oxide (FTO) electrode (BiOI/FTO). Electrodes as developed were subjected to extensive characterization techniques viz. field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy, atomic force microscopy, X-ray diffractometer, ultraviolet–visible spectroscopy, and other electrochemical techniques to observe physio(electro)chemical correlation between galvanic deposition and electrodeposition. In the next step, these BiOI/FTO electrodes were utilized to develop 3D porous BiVO4/FTO electrodes (termed as g-BiVO4) via a mild thermochemical process. The g-BiVO4/FTO electrode prepared this way exhibited exceptional photoelectrochemical performance for sulfite oxidation, achieving 1.2 mA cm–2 at a bias potential of 1.23 V versus reversible hydrogen electrode (RHE) with the early photocurrent onset (0.21 V vs RHE), as comparable to electrodeposited BiVO4 on a FTO electrode (e-BiVO4/FTO). We also fabricated Schottky barrier diode to shed light on the charge-transport mechanism of the g-BiVO4/FTO electrode. In order to improve water oxidation kinetics, we further photodeposited cobalt acetate (CoAc) on the g-BiVO4/FTO electrode. The CoAc-g-BiVO4/FTO electrode, on optimization, showed a photocurrent of 0.73 mA cm–2 at 1.23 V under the illumination of 20 mW cm–2 blue light-emitting diode with 36 h of sustained water catalytic performance. This demonstrates the importance of galvanic deposition process as an alternative to the high energy-demanding synthesis techniques such as electrodeposition, hydrothermal, and so forth.
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