石墨烯
光电探测器
材料科学
响应度
光电子学
异质结
量子点
锗
吸收(声学)
红外线的
电子迁移率
纳米技术
光学
硅
物理
复合材料
作者
Wei Zhu,Zhongying Xue,Gang Wang,Menghan Zhao,Da Chen,Qinglei Guo,Zhiduo Liu,Xiaoqiang Feng,Guqiao Ding,Paul K. Chu,Zengfeng Di
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2020-06-22
卷期号:3 (7): 6915-6924
被引量:20
标识
DOI:10.1021/acsanm.0c01258
摘要
Two-dimensional graphene films and graphene derivatives have attracted broad interest because of the large potential in optoelectronic applications. However, improving the performance of photodetectors based on graphene films and graphene derivatives remains a great challenge. Through replacing graphene films with vertically oriented graphene (VOG), which is subsequently functionalized with graphene quantum dots (GQDs), a functional VOG is assembled on the germanium (Ge) heterojunction (designated as GQDs/VOG/Ge) for near-infrared light detection. The properties of the photodetector are enhanced by the synergistic effects of GQDs and VOG with regard to light absorption and electron transport. Functional modification of VOG is an efficient way to adjust and control the Fermi level of VOG, increase the built-in potential of the Schottky junctions, and facilitate separation of photoinduced electron and hole pairs. The as-fabricated photodetector shows excellent responsivity (1.06 × 106 AW–1) and detectivity (2.11 × 1014 cm Hz1/2 W–1) at a wavelength of 1550 nm. Investigation of the photoresponse reveals response rates with microsecond rise/fall time in addition to excellent reproducibility and long-term stability. The results reveal a simple strategy to fabricate novel structures for high-performance graphene-based photodetectors.
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