材料科学
光电探测器
指纹(计算)
光电二极管
光电子学
背板
指纹识别
动态范围
图像传感器
光学
计算机科学
计算机硬件
计算机安全
物理
作者
Daniel Tordera,Bart Peeters,Hylke B. Akkerman,Albert J. J. M. van Breemen,Joris Maas,S. Shanmugam,Auke Jisk Kronemeijer,Gerwin H. Gelinck
标识
DOI:10.1002/admt.201900651
摘要
Abstract Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large‐area light sensing applications. Here, high‐resolution slot‐die‐coated large‐area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with a molybdenum oxide top‐electrode. Together, these effectively reduce dark current densities to very low levels of ≈10 −7 mA cm −2 at −2 V. The OPDs show linear behavior in a wide range of light intensities and high detectivity values under reverse bias conditions. When coated on a 508 ppi TFT backplane, a high‐quality optical fingerprint scanner capable of imaging in reflection is realized. The optical and electrical properties of the fingerprint sensor are characterized and high‐resolution fingerprint images are obtained.
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