发光二极管
兴奋剂
光电子学
材料科学
电压降
二极管
紫外线
电子
量子效率
光学
功率(物理)
物理
分压器
量子力学
作者
Wen Gu,Yi Lu,Rongyu Lin,Wenzhe Guo,Zi Hui Zhang,Jae‐Hyun Ryou,Jianchang Yan,Junxi Wang,Jinmin Li,Xiaohang Li
标识
DOI:10.1088/1361-6463/abdefc
摘要
Abstract The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al 0.3 Ga 0.7 N EBL with a doping concentration of 1 × 10 20 cm −3 , the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing ultraviolet LED structures.
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