硫系化合物
折射率
材料科学
退火(玻璃)
带隙
热稳定性
无定形固体
锗
光学
光电子学
分析化学(期刊)
化学
结晶学
硅
复合材料
物理
色谱法
有机化学
作者
Jinbo Chen,Jingshuang Qin,Limeng Zhang,Yimin Chen,Xiang Shen,Jierong Gu,Tiefeng Xu
标识
DOI:10.1088/2053-1591/abc4b7
摘要
Abstract Ge–Se–Te chalcogenide films with Ge content from 10% to 27% were prepared using thermal evaporation. The films were annealed with different times, and the changes of the linear refractive index and optical band gap of the films with different chemical compositions were investigated. It was found that, after 30 h of annealing, the Ge 20 Se 8.5 Te 71.5 film exhibits the smallest change ratio in terms of linear refractive index (<0.5%), optical band gap (<1.5%), and thickness (<2.5%). Therefore, this component has the best optical stability in the Ge–Se–Te system studied in this paper. The optical band gap of Ge 20 Se 8.5 Te 71.5 is about 0.8 eV, and the refractive index exceeds 3.4, which is beneficial to the applications in Te-based optical waveguide devices.
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