Study on energy and information storage properities of 2D-MXene/polyimide composites

材料科学 复合材料 聚酰亚胺 复合数 同步辐射 储能 电压 电场 形状记忆合金 计算机数据存储 电气工程 计算机科学 光学 物理 功率(物理) 图层(电子) 量子力学 工程类 操作系统
作者
Xiaoxu Liu,Dongyang Chen,Yang Chen,Yanpeng Li,Yu Feng,Jialong Li,Yue Dong,Jiawei Zhang,Yao Li,Jinghua Yin
出处
期刊:Composites Part B-engineering [Elsevier BV]
卷期号:241: 110014-110014 被引量:24
标识
DOI:10.1016/j.compositesb.2022.110014
摘要

The memristor is a basic unit of advanced information storage devices. As a passive device, it needs additional bias voltage to drive, which brings great challenges to the development of highly integrated of memristors. Therefore, it is urgent to develop highly reliable functional materials with both resistance memory and electric energy storage properties. Herein, with the introduction of Ti3C2TX nanosheets (TCTNs) into a polyimide matrix, we take the lead in realizing synchronous resistance memory characteristics and energy storage performance in one material system. With the addition of only 0.5 wt% TCTNs, the charge-discharge energy storage density of the polyimide (PI)-based composite increased by approximately 30%, and showed the memristor characteristics. More encouragingly, the composites also exhibited a massive increase in mechanical flexibility and electrical reliability. The slightly ordered arrangement of TCTNs in the PI matrix was confirmed by synchrotron radiation SAXS and HR-TEM. Finite element analysis was used to simulate the redistribution of the stress field and electric field of these composites in the presence of different distribution states of TCTNs. The chemical valence state and the atomic structure of TCTNs in the PI matrix were investigated by synchrotron radiation XAFS technology. DFT calculation models were established to calculate the evolution of the energy band structure of TCTNs during the synthesis process of the composites, determining the synergistic enhancement mechanism of energy storage and information storage properties in TCTNs/PI composites. This study is expected to provide a material candidate of highly integrated and reliable self-powered information storage devices.
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