带隙
半导体
材料科学
灵活性(工程)
有机半导体
GSM演进的增强数据速率
纳米技术
光电子学
聚合物
凝聚态物理
物理
复合材料
计算机科学
数学
电信
统计
作者
Yongxia Wang,Mingyang Fu,Xiaofei Zhang,Dong Jin,Shiyuan Zhu,Yucong Wang,Zhenyu Wu,Jianmin Bao,Xiaogang Cheng,Lei Yang,Linghai Xie
标识
DOI:10.1021/acs.jpclett.2c00827
摘要
Molecular cross-scale gridization and polygridization of organic π-backbones make it possible to install 0/1/2/3-dimensional organic wide-bandgap semiconductors (OWBGSs) with potentially ZnO-like fascinating multifunctionality such as optoelectronic and piezoelectronic features. However, gridization effects are limited to uncover, because the establishment of gridochemistry still requires a long time, which offers a chance to understand the effects with a theoretical method, together with data statistics and machine learning. Herein, we demonstrate a state-of-the-art 3D cubic nanogridon with a size of ∼2 × 2 × 1.5 nm3 to examine its multigridization of π-segments on the bandgap, molecular strain energy (MSE), as well as reorganization energy (ROE). A cubic gridon (CG) consists of a four-armed bifluorene skeleton and a thiophene-containing fused arene plane with the Csp3 spiro-linkage, which can be deinstalled into face-on or edge-on monogrids. As a result, multigridization does not significantly reduce bandgaps (Eg ≥ 4.03 eV), while the MSE increases gradually from 4.72 to 23.83 kcal/mol. Very importantly, the ROE of a CG exhibits an extreme reduction down to ∼28 meV (λ+) that is near the thermal fluctuation energy (∼26 meV). Our multigridization results break through the limitation of the basic positively proportional relationship between reorganization energies and bandgaps in organic semiconductors. Furthermore, multigridization makes it possible to keep the ROE small under the condition of a high MSE in OWBGS that will guide the cross-scale design of multifunctional OWBGSs with both inorganics' optoelectronic performance and organics' mechanical flexibility.
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