Adjusting indium-tin-oxide film thickness to improve electrochemical corrosion resistance of gate driver on array

Common narrow-bezel display suffers from the abnormal display in the high-temperature and high-humidity environments, resulting in an early device failure. Improving electrochemical corrosion resistance of gate driver on array (GOA) may overcome the drawback of the display. Adjusting film thickness of indium tin oxide (ITO) on GOA through-hole is proposed to in situ improve the electrochemical corrosion resistance. Nano-ITO film with four different thicknesses were deposited in a direct-current magnetron sputter system. A systematic investigation was conducted on their microstructure and photoelectric performances, and a high-temperature and high-humidity display test was employed for field test. The 80.1-nm film exhibited superior surface smoothness and photoelectric performance, and the assembled GOA unit presented the best electrochemical corrosion resistance. We demonstrated that adjusting ITO film thickness may prevent the intrusion from water vapor and reduce the generation of resistance heat.