神经形态工程学
记忆电阻器
油藏计算
遗忘
电阻随机存取存储器
计算机科学
双功能
计算机体系结构
块(置换群论)
非常规计算
非易失性存储器
材料科学
人工神经网络
电子工程
计算机硬件
人工智能
分布式计算
电气工程
工程类
循环神经网络
语言学
哲学
生物化学
几何学
数学
化学
电压
催化作用
作者
Nikolay Lyapunov,Xinyu Zheng,Kevin Yang,Hao Min Liu,Kai Zhou,Song Hua Cai,Tsz Lung Ho,Chun Hung Suen,Ming Yang,Jiong Zhao,Xiaoyuan Zhou,Jiyan Dai
标识
DOI:10.1002/aelm.202101235
摘要
Abstract As a promising building block of the emerging neuromorphic computing hardware, memristive structures with multi‐functionalities are highly desired to implement diversified computing applications in a single device. However, the demonstration of such multi‐functional structures remains limited. In this work, an Ag/GeS/Pt‐based bifunctional memory structure with both long‐term and short‐term memristive behaviors is reported, enabling multiple neuromorphic computing applications in a single device. It is found that the unexpected short‐term switching in Ag/GeS/Pt can not only be used to simulate learning/relearning and forgetting behavior but can also be implemented for reservoir computing. While for long‐term switching memristive behavior, its application is demonstrated as the traditional memory. The work reveals a novel coexistence of the two types of resistive switching, shedding light on various neuromorphic computing applications such as reservoir computing and traditional memory realized in a single memristive device.
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