Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite

Abstract Emerging optoelectronic resistive random access memory (RRAM) devices, enabled by optoelectronic materials with excellent properties have considerable advantages in terms of crosstalk, power consumption, response speed, and highly improved storage and computing abilities of RRAM devices. However, optoelectronic RRAM devices exhibiting outstanding electrical as well as optoelectronic performances are seldom reported, which hinders the development of the corresponding data storage and computing devices. In this study, an optoelectronic RRAM device with excellent electrical and optoelectronic properties is constructed based on surface‐plasma‐treated inorganic halide perovskite. The proposed RRAM device shows light‐assisted multilevel resistance as well as excellent resistive switching (RS) behavior, such as a high ON/OFF ratio, stable endurance and retention time. Moreover, the ADDER function and logic operation (IMPLICATION and OR) are successfully implemented on the proposed device with aid of light. Additionally, it is shown that the perovskite can be grown on a flexible substrate, leading to a flexible RRAM device exhibiting stable RS behavior. The possible operating mechanism is elaborated based on the Ag atom conductive filament model with assistance of density functional theory calculations. This proposed high‐performance multifunctional optoelectronic RRAM device undoubtedly shows broad possibilities for developing high‐density storage, in‐computing, flexible and transient memory devices.