Growth and optoelectronic properties of CuFeS2 thin film and effect of annealing temperature

In the present work copper iron sulfide nanocrystalline thin film grown by chemical bath deposition (CBD) at acidic value of pH onto glass substrates has been systematically studied for the effect of annealing temperature. The deposited thin film was characterized by SEM for its morphology, the morphology showed a flower like structure, highly beneficial for maximum absorption of light. The Raman Spectroscopy and XRD confirmed the formation of CuFeS2 thin film and the effect of annealing was studied using UV-Vis Spectroscopy and Current-Voltage (I-V) characteristics. The bandgap was found to decrease with increasing annealing temperature and the resistance also increasing with increasing annealing temperature.