X射线光电子能谱
带材弯曲
肖特基势垒
光电发射光谱学
欧姆接触
材料科学
光谱学
肖特基二极管
分析化学(期刊)
化学
核磁共振
光电子学
纳米技术
物理
图层(电子)
二极管
量子力学
色谱法
作者
Archit Dhingra,Alexey Lipatov,Alexander Sinitskii,Peter A. Dowben
标识
DOI:10.1088/1361-648x/ac16f8
摘要
Interaction between the Au adlayers and ZrS3(001) has been examined via x-ray photoemission spectroscopy (XPS). The angle-resolved XPS measurements reveal that ZrS3(001) is disulfide (S22−) terminated and the Au thickness-dependent XPS indicates that the observed band bending, for low Au coverage, is consistent with formation of a Schottky barrier at the Au/ZrS3(001) interface. This band bending, however, appears to be suppressed as the thickness of Au adlayer is increased, indicating varying interfacial interactions at the Au/ZrS3(001) interface. Such complex interface effects between Au and ZrS3(001) may explain the observed non-ohmic I–V characteristics for a ZrS3-based device, and could suppress current injection.
科研通智能强力驱动
Strongly Powered by AbleSci AI