整改
纳米棒
异质结
材料科学
欧姆接触
钻石
光电子学
兴奋剂
量子隧道
空间电荷
制作
热离子发射
宽禁带半导体
凝聚态物理
纳米技术
电压
图层(电子)
电子
电气工程
复合材料
医学
物理
替代医学
工程类
量子力学
病理
作者
Liying Wang,Shaoheng Cheng,Chengze Wu,Kai Pei,Yanpeng Song,Hongdong Li,Qinglin Wang,Dandan Sang
摘要
This work explores the temperature-dependent characteristic and carrier transport behavior of a heterojunction of n-WO3 nanorods (NRs)/p-diamond. The n-type WO3 NRs grown by the hydrothermal method were deposited on a p-type boron-doped diamond film. The p-n heterojunction devices showed good thermal stability and have rectification characteristic from room temperature up to 290 °C. With increasing temperature, the turn-on voltages were decreased, and the rectification ratios were relatively high. The calculated ideality factor of the device decreased monotonously with increased temperature. The carrier transport mechanisms at different applied bias voltages following Ohmic laws, recombination-tunneling, and space-charge-limited current conduction of the heterojunction are discussed depending on temperature.
科研通智能强力驱动
Strongly Powered by AbleSci AI