高电子迁移率晶体管
光电子学
材料科学
宽禁带半导体
氮化镓
逻辑门
电气工程
晶体管
工程类
图层(电子)
纳米技术
电压
作者
Jianzhi Wu,Wei Lu,Paul K. L. Yu
出处
期刊:International Conference on Electron Devices and Solid-State Circuits
日期:2015-06-01
被引量:5
标识
DOI:10.1109/edssc.2015.7285184
摘要
This paper presents results of normally-off AlGaN/GaN MOS-HEMTs fabricated with a two-step gate recess technique which includes a chloride based Inductively Coupled Plasma (ICP) etch followed by HCI and NH 4 OH surface treatment. The latter can effectively smoothen evenly the ICP etched surface. The two-step gate recessed device with atomic layer deposited (ALD) Al 2 O 3 as gate dielectric delivers a threshold voltage (V th ) of +1V and a maximum current density per gate width (I max ) of up to 0.583 A/mm which is 90% that of an un-recessed gate depletion-mode AlGaN/GaN HEMT device (V th of −3.5V) fabricated from the same epitaxial wafer.
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