Influence of Anode Layout on the Performance of SiC JBS Diodes

Various layouts of the anode of Junction Barrier Schottky (JBS) diodes are compared theoretically and it is found that the hexagonal honeycomb structure with 3-D symmetry offers the best figure of merit (FOM). Proportional relationships between the various layouts are reported, using which we extend a fully analytical 2-D model for reverse biased field shielding in a JBS diode to the superior 3-D layouts. The effect of reducing implanted feature size is also analyzed as a trade-off between FOM and breakdown voltage capability.