弗伦克尔缺陷
空位缺陷
离子
离子电导率
活化能
材料科学
兴奋剂
电导率
离子键合
Crystal(编程语言)
结晶学
电阻率和电导率
航程(航空)
分析化学(期刊)
化学
物理化学
电极
电解质
电气工程
光电子学
有机化学
色谱法
计算机科学
程序设计语言
复合材料
工程类
摘要
Transference number measurements on pure and doped crystals show that the predominant defect in CaF2 crystals in the anti-Frenkel disorder type involving equal concentrations of negative ion vacancies and negative ion interstitials. The mobilities of the F— vacancy and F— interstitial have been determined by measuring the electrical conductivity of crystals doped with NaF and YF3. The activation energy for mobility of the vacancies varies from 20±1.5 kcal/mole at 200°C to 12±1 kcal/mole at 600°C. For the interstitials, the mobility in the range from 690 to 920°C is given by u=(1.34×107)T−1 exp[−(19±4)×103/T] cm2/sec volt.The number of anti-Frenkel defects in the pure crystal in the range from 640 to 920°C is given by n0=2.96×1025exp[−(16.3×103)/T] cm−3.
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