N. Li,Xiang Li,S. Demiguel,X.G. Zheng,Joe C. Campbell,D.A. Tulchinsky,Keith J. Williams,T. Isshiki,Geoffrey S. Kinsey
标识
DOI:10.1109/leos.2003.1253037
摘要
In this paper a high-saturation-current charge-compensated InGaAs/InP uni-traveling-carrier photodiode with charge compensated collector layer is demonstrated. A 16 /spl mu/m diameter photodiode has demonstrated an output current of 80 mA and a bandwidth of 30 GHz.