石墨烯
材料科学
硅
光电子学
石墨烯纳米带
电子迁移率
单层
绝缘体上的硅
纳米技术
场效应晶体管
MOSFET
CMOS芯片
电压
晶体管
电气工程
工程类
作者
Max C. Lemme,T. J. Echtermeyer,M. Baus,H. Kurz
出处
期刊：IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期：2007-04-01
卷期号：28 (4): 282-284
被引量：1033
标识
DOI：10.1109/led.2007.891668
摘要
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
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