光学
纳米光子学
绝缘体上的硅
折射率
硅
光子集成电路
材料科学
光子学
硅光子学
光电子学
集成光学
传输损耗
物理
作者
Wim Bogaerts,Pieter Dumon,Dries Van Thourhout,Roel Baets
出处
期刊:Optics Letters
[The Optical Society]
日期:2007-09-20
卷期号:32 (19): 2801-2801
被引量:304
摘要
We present compact crossings for silicon-on-insulator photonic wires. The waveguides are broadened using a 3 microm parabolic taper in each arm. By locally applying a lower index contrast using a double-etch technique, loss of confinement is reduced and 97.5% transmission (-1.7 dB) is achieved with only -40 dB cross talk.
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